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| NSI45020JZT1G Adjustable Constant Current Regulator & LED Driver 45 V, 20 - 40 mA + 15%, 1.5 W Package The adjustable constant current regulator (CCR) is a simple, economical and robust device designed to provide a cost effective solution for regulating current in LEDs. The CCR is based on patent-pending Self-Biased Transistor (SBT) technology and regulates current over a wide voltage range. It is designed with a negative temperature coefficient to protect LEDs from thermal runaway at extreme voltages and currents. The CCR turns on immediately and is at 20% of regulation with only 0.5 V Vak. The Radj pin allows Ireg(SS) to be adjusted to higher currents by attaching a resistor between Radj (Pin 3) and the Cathode (Pin 4). The Radj pin can also be left open (No Connect) if no adjustment is required. It requires no external components allowing it to be designed as a high or low-side regulator. The high anodecathode voltage rating withstands surges common in Automotive, Industrial and Commercial Signage applications. This device is available in a thermally robust package and is qualified to stringent AEC-Q101 standard, which is lead-free RoHS compliant and uses halogen-free molding compound. Features http://onsemi.com Ireg(SS) = 20 - 40 mA @ Vak = 7.5 V Anode 1 3 Radj 2/4 Cathode * * * * * * * * * * Robust Power Package: 1.5 Watts Adjustable up to 40 mA Wide Operating Voltage Range Immediate Turn-On Voltage Surge Suppressing - Protecting LEDs AEC-Q101 Qualified SBT (Self-Biased Transistor) Technology Negative Temperature Coefficient Eliminates Additional Regulation These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant SOT-223 CASE 318E STYLE 2 MARKING DIAGRAM C AYW AAJG G 1 A C Radj A = Assembly Location Y = Year W = Work Week AAJ = Specific Device Code G = Pb-Free Package (Note: Microdot may be in either location) Applications * Automobile: Chevron Side Mirror Markers, Cluster, Display & Instrument Backlighting, CHMSL, Map Light Lettering * AC Lighting Panels, Display Signage, Decorative Lighting, Channel * Switch Contact Wetting * Application Note AND8349/D - Automotive CHMSL * Application Note AND8391/D - Power Dissipation Considerations ORDERING INFORMATION Device NSI45020JZT1G Package SOT-223 (Pb-Free) Shipping 1000/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2010 June, 2010 - Rev. 0 1 Publication Order Number: NSI45020JZ/D NSI45020JZT1G MAXIMUM RATINGS (TA = 25C unless otherwise noted) Rating Anode-Cathode Voltage Reverse Voltage Operating and Storage Junction Temperature Range ESD Rating: Human Body Model Machine Model Symbol Vak Max VR TJ, Tstg ESD Value 45 500 -55 to +150 Class 2 Class C Unit V mV C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Steady State Current @ Vak = 7.5 V (Note 1) Voltage Overhead (Note 2) Pulse Current @ Vak = 7.5 V (Note 3) Capacitance @ Vak = 7.5 V (Note 4) Capacitance @ Vak = 0 V (Note 4) 1. 2. 3. 4. Symbol Ireg(SS) Voverhead Ireg(P) C C 17.15 7.4 31 Min 17 Typ 20 1.8 23.4 Max 23 Unit mA V mA pF pF THERMAL CHARACTERISTICS Ireg(SS) steady state is the voltage (Vak) applied for a time duration 35 sec, using FR-4 @ 300 mm2 2 oz. Copper traces, in still air. Voverhead = Vin - VLEDs. Voverhead is typical value for 80% Ireg(SS). Ireg(P) non-repetitive pulse test. Pulse width t 1.0 msec. f = 1 MHz, 0.02 V RMS. Characteristic Symbol PD RJA RJL4 PD RJA RJL4 PD RJA RJL4 PD RJA RJL4 PD RJA RJL4 PD RJA RJL4 TJ, Tstg Max 1008 8.06 124 33.3 1136 9.09 110 33.3 1238 9.9 101 33.7 1420 11.36 88 32.1 1316 10.53 95 32.4 1506 12.05 83 30.8 -55 to +150 Unit mW mW/C C/W C/W mW mW/C C/W C/W mW mW/C C/W C/W mW mW/C C/W C/W mW mW/C C/W C/W mW mW/C C/W C/W C Total Device Dissipation (Note 5) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient (Note 5) Thermal Reference, Junction-to-Lead 4 (Note 5) Total Device Dissipation (Note 6) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient (Note 6) Thermal Reference, Junction-to-Lead 4 (Note 6) Total Device Dissipation (Note 7) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient (Note 7) Thermal Reference, Junction-to-Lead 4 (Note 7) Total Device Dissipation (Note 8) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient (Note 8) Thermal Reference, Junction-to-Lead 4 (Note 8) Total Device Dissipation (Note 9) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient (Note 9) Thermal Reference, Junction-to-Lead 4 (Note 9) Total Device Dissipation (Note 10) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient (Note 10) Thermal Reference, Junction-to-Lead 4 (Note 10) Junction and Storage Temperature Range NOTE: Lead measurements are made by non-contact methods such as IR with treated surface to increase emissivity to 0.9. Lead temperature measurement by attaching a T/C may yield values as high as 30% higher C/W values based upon empirical measurements and method of attachment. 5. FR-4 @ 300 mm2, 1 oz. copper traces, still air. 6. FR-4 @ 300 mm2, 2 oz. copper traces, still air. 7. FR-4 @ 500 mm2, 1 oz. copper traces, still air. 8. FR-4 @ 500 mm2, 2 oz. copper traces, still air. 9. FR-4 @ 700 mm2, 1 oz. copper traces, still air. 10. FR-4 @ 700 mm2, 2 oz. copper traces, still air. http://onsemi.com 2 NSI45020JZT1G Minimum FR-4 @ 300 mm2, 2 oz Copper Trace, Still Air Ireg(SS), STEADY STATE CURRENT (mA) 50 Ireg, CURRENT REGULATION (mA) 40 30 20 10 0 -10 -20 -10 0 10 20 30 TA = 25C, Radj = Open 40 50 60 70 25 20 15 10 5 0 TA = -40C -0.0302 mA/C -0.0290 mA/C -0.0278 mA/C TA = 25C TA = 85C TA = 125C Radj = Open DC Test Steady State, Still Air 0 1 2 3 4 5 6 7 8 9 10 TYPICAL PERFORMANCE CURVES Vak, ANODE-CATHODE VOLTAGE (V) Vak, ANODE-CATHODE VOLTAGE (V) Figure 1. General Performance Curve for CCR Ireg(SS), STEADY STATE CURRENT (mA) 22 Ireg(P), PULSE CURRENT (mA) 21 20 19 18 17 3.0 TA = 25C 24 23 22 21 20 19 18 17 17 Figure 2. Steady State Current (Ireg(SS)) vs. Anode-Cathode Voltage (Vak) Radj = Open Non-Repetitive Pulse Test 4.0 5.0 6.0 7.0 8.0 9.0 10 Vak @ 7.5 V TA = 25C Radj = Open 18 19 20 21 22 23 24 Vak, ANODE-CATHODE VOLTAGE (V) Ireg(P), PULSE CURRENT (mA) Figure 3. Pulse Current (Ireg(P)) vs. Anode-Cathode Voltage (Vak) Ireg(SS), STEADY STATE CURRENT (mA) 22 Ireg, CURRENT REGULATION (mA) Vak @ 7.5 V TA = 25C Radj = Open 21 40 35 30 Figure 4. Steady State Current vs. Pulse Current Testing Vak @ 7.5 V TA = 25C 20 25 20 15 19 0 5 10 15 20 25 30 35 1 10 100 1000 TIME (s) Radj (W), MAX POWER 50 mW Figure 5. Current Regulation vs. Time Figure 6. Ireg(SS) vs. Radj http://onsemi.com 3 NSI45020JZT1G 2300 2100 POWER DISSIPATION (mW) 1900 1700 1500 1300 1100 900 700 500 -40 -20 0 500 mm2/1 oz 300 mm2/1 oz 100 mm2/1 oz 20 40 60 80 500 mm2/2 oz 300 mm2/2 oz 100 mm2/2 oz TA, AMBIENT TEMPERATURE (C) Figure 7. Power Dissipation vs. Ambient Temperature @ TJ = 1505C APPLICATIONS D1 Anode Cathode + - LED Q1 Q2 Qx D1 Anode Q1 Q2 Qx Radj LED HF3-R5570 Radj LED HF3-R5570 Radj + - HF3-R5570 Cathode Vin LED Radj Radj Radj Vin HF3-R5570 LED HF3-R5570 LED HF3-R5570 LED HF3-R5570 LED HF3-R5570 LED HF3-R5570 LED HF3-R5570 LED HF3-R5570 LED HF3-R5570 Figure 8. Typical Application Circuit (30 mA each LED String) Number of LED's that can be connected is determined by: D1 is a reverse battery protection diode LED's = ((Vin - QX VF - D1 VF)/LED VF) Example: Vin = 12 Vdc, QX VF = 3.5 Vdc, D1VF = 0.7 V LED VF = 2.2 Vdc @ 30 mA (12 Vdc - 4.2 Vdc)/2.2 Vdc = 3 LEDs in series. Figure 9. Typical Application Circuit (90 mA each LED String) Number of LED's that can be connected is determined by: D1 is a reverse battery protection diode Example: Vin = 12 Vdc, QX VF = 3.5 Vdc, D1VF = 0.7 V LED VF = 2.6 Vdc @ 90 mA (12 Vdc - (3.5 + 0.7 Vdc))/2.6 Vdc = 3 LEDs in series. Number of Drivers = LED current/30 mA 90 mA/30 mA = 3 Drivers (Q1, Q2, Q3) http://onsemi.com 4 NSI45020JZT1G Comparison of LED Circuit using CCR vs. Resistor Biasing ON Semiconductor CCR Design Constant brightness over full Supply Voltage (more efficient), see Figure 10 Little variation of power in LEDs, see Figure 11 Constant current extends LED strings lifetime, see Figure 10 Current decreases as voltage increases, see Figure 10 Current supplied to LED string decreases as temperature increases (self-limiting), see Figure 2 Single resistor is used for current select Fewer components, less board space required Surface mount component Resistor Biased Design Large variations in brightness over full Automotive Supply Voltage Large variations of current (power) in LEDs High Supply Voltage/ Higher Current in LED strings limits lifetime Current increases as voltage increases LED current decreases as temperature increases Requires costly inventory (need for several resistor values to match LED intensity) More components, more board space required Through-hole components 30 25 20 I (mA) 15 10 5 0 TA = 25C Circuit Current with CCR Device Pd LEDs (mW) Circuit Current with 375 W Representative Test Data for Figure 8 Circuit, Current of LEDs, FR-4 @ 300 mm2, 2 oz Copper Area 9 10 11 12 13 14 15 16 180 160 140 120 100 80 60 40 20 0 9 TA = 25C LED Power with CCR Device LED Power with 375 W Representative Test Data for Figure 8 Circuit, Pd of LEDs, FR-4 @ 300 mm2, 2 oz Copper Area 10 11 12 13 14 15 16 Vin (V) Vin (V) Figure 10. Series Circuit Current Current Regulation: Pulse Mode (Ireg(P)) vs DC Steady-State (Ireg(SS)) Figure 11. LED Power There are two methods to measure current regulation: Pulse mode (Ireg(P)) testing is applicable for factory and incoming inspection of a CCR where test times are a minimum. (t < 300 ms). DC Steady-State (Ireg(SS)) testing is applicable for application verification where the CCR will be operational for seconds, minutes, or even hours. ON Semiconductor has correlated the difference in Ireg(P) to Ireg(SS) for stated board material, size, copper area and copper thickness. Ireg(P) will always be greater than Ireg(SS) due to the die temperature rising during Ireg(SS). This heating effect can be minimized during circuit design with the correct selection of board material, metal trace size and weight, for the operating current, voltage, board operating temperature (TA) and package. (Refer to Thermal Characteristics table). http://onsemi.com 5 NSI45020JZT1G PACKAGE DIMENSIONS SOT-223 (TO-261) CASE 318E-04 ISSUE M D b1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. MILLIMETERS NOM MAX 1.63 1.75 0.06 0.10 0.75 0.89 3.06 3.20 0.29 0.35 6.50 6.70 3.50 3.70 2.30 2.40 0.94 1.05 1.75 2.00 7.00 7.30 10 - INCHES NOM 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 0.069 0.276 - 4 HE E 1 2 3 e1 b e A q L1 C DIM A A1 b b1 c D E e e1 L1 HE q MIN 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 1.50 6.70 0 MIN 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.060 0.264 0 MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 0.078 0.287 10 0.08 (0003) A1 STYLE 2: PIN 1. 2. 3. 4. ANODE CATHODE NC CATHODE SOLDERING FOOTPRINT 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 mm inches SCALE 6:1 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 6 NSI45020JZ/D |
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